參數(shù)資料
型號: 2N2484DIE
廠商: MICROSEMI CORP
元件分類: 小信號晶體管
英文描述: 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: DIE
文件頁數(shù): 1/2頁
文件大小: 53K
代理商: 2N2484DIE
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
Qualified Level
2N2484
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2484
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
50
mAdc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
360
1.2
mW
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
146
0C/W
1) Derate linearly 2.06 mW/
0C above TA = +250C
2) Derate linearly 6.85 mW/
0C above TC = +250C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
V(BR)CEO
60
Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
ICES
5.0
ηAdc
Collector-Base Cutoff Current
VCB = 45 Vdc
VCB = 60 Vdc
ICBO
5.0
10
ηAdc
Adc
Collector-Emitter Cutoff Current
VCE = 5.0 Vdc
ICEO
2.0
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
VEB = 6.0 Vdc
IEBO
2.0
10
ηAdc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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