參數(shù)資料
型號(hào)： 2N2369A
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
封裝： METAL PACKAGE-3
文件頁數(shù)： 3/8頁
文件大小： 47K
代理商： 2N2369A
1997 May 06
3
Philips Semiconductors
Product specication
NPN switching transistor
2N2369A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector; IC =10 Ato10mA
4.5
V
IC
collector current (DC)
200
mA
ICM
peak collector current
300
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
360
mW
Tcase ≤ 25 °C
1.2
W
Tcase ≤ 100 °C
680
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
486
K/W
Rth j-c
thermal resistance from junction to case
146
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
400
nA
IE = 0; VCB =20V; Tamb = 150 °C
30
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 350 mV; note 1
40
IC = 10 mA; VCE = 350 mV;
Tamb = 55 °C; note 1
20
IC = 10 mA; VCE = 1 V; note 1
120
IC = 30 mA; VCE = 400 mV; note 1
30
IC = 100 mA; VCE = 1 V; note 1
20
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB =1mA
200
mV
IC = 10 mA; IB = 1 mA; Tamb = 125 °C
300
mV
IC = 30 mA; IB =3mA
250
mV
IC = 100 mA; IB =10mA
500
mV
相關(guān)PDF資料
PDF描述
2N2369G4 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2N2369 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2N2369-JQR-B 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
2N2369 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2369 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2369A_02 制造商:SEMICOA 制造商全稱:SEMICOA 功能描述:Silicon NPN Transistor
2N2369A_07 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N2369A_1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN SILICON TRANSISTOR
2N2369A1 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS
2N2369ACSM 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELNPN15V0.2ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,NPN,15V,0.2A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,NPN,15V,0.2A,LCC1; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Power Dissipation Pd:360mW; DC Collector Current:200mA; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes
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