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參數(shù)資料
| 型號： | 2N2328AS |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIER |
| 中文描述： | 0.3454 A, 300 V, SCR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 67K |
| 代理商： | 2N2328AS |
2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Forward Blocking Current
R
2
= 1 k
2N2323 thru 2N2329
2N2323S thru 2N2329S
R
2
= 2 k
2N2323A thru 2N2328A
2N2323AS thru 2N2328AS
V
R
= 50 Vdc
2N2323, S, A, AS
V
R
= 100 Vdc
2N2324, S, A, AS
V
R
= 200 Vdc
2N2326, S, A, AS
V
R
= 300 Vdc
2N2328, S, A, AS
V
R
= 400 Vdc
2N2329, S
Reverse Gate Current
V
KG
= 6 Vdc
Gate Trigger Voltage and Current
V
2
= V
FBX
= 6 Vdc; R
L
= 100
R
e
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
e
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
SUBGROUP 4 TESTING
Exponential Rate of Voltage Rise T
A
= 125
0
C
50
≤
R
L
≤
400
, C = 0.1 to 1.0
μ
F, repetition rate = 60 pps,
test duration = 15 seconds
dv/dt = 1.8 v/
μ
s, R
3
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
dv/dt = 0.7 v/
μ
s, R
3
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
V
AA
= 50 Vdc
2N2323, S, A, AS
V
AA
= 100 Vdc
2N2324, S, A, AS
V
AA
= 200 Vdc
2N2326, S, A, AS
V
AA
= 300 Vdc
2N2328, S, A, AS
V
AA
= 400 Vdc
2N2329, S
Forward “on” Voltage
i
FM
= 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max
Holding Current
V
AA
= 24 Vdc max, I
F1
= 100 mAdc, I
F2
= 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25
μ
s min., R
2
= 330
R
3
= 1 k
2N2323 thru 2N2329 and
2N2323S thru 2N2329S
R
3
= 2 k
2N2323A thru 2N2328A and
2N2323AS thru 2N2328AS
Symbol
Min.
Max.
Unit
I
FBX1
10
μ
Adc
I
KG
200
μ
Adc
V
GT1
I
GT1
V
GT1
I
GT1
0.35
0.35
0.80
200
0.60
20
Vdc
μ
Adc
Vdc
μ
Adc
V
FBX
47
95
190
285
380
Vdc
V
FM
2.2
V(pk)
I
HOX
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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