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參數(shù)資料
| 型號： | 2N2222AHR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 228K |
| 代理商： | 2N2222AHR |
2N2222AHR
Electrical characteristics
Doc ID 16558 Rev 1
3/9
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 5.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off
current (IE = 0)
VCB = 60 V
Tamb = 150 °C
-
10
nA
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 3 V
-
10
nA
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 100 A
75
-
V
V(BR)CEO
(1)
1.
Pulsed duration = 300 s, duty cycle
≤ 2 %
Collector-emitter
breakdown voltage
(IB = 0)
IC = 30 mA
40
-
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 100 A
6
-
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
-
0.3
V
VBE(sat)
(1)
Base-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
-
1.2
V
hFE
(1)
DC current gain
IC = 0.1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
Tamb = -55 °C
35
75
100
40
35
-
300
hfe
Small signal current
gain
VCE = 20 V
IC = 20 mA
f = 100 MHz
3-
10
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz
≤ f ≤ 1 MHz
-8
pF
ton
Turn-on time
VCC = 30 V
IC = 150 mA
IB1 = 15 mA
-35
ns
toff
Turn-off time
VCC = 30 V
IC = 150 mA
IB1 = -IB2 = 15 mA
-
285
ns
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