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參數(shù)資料
| 型號： | 2N2222AC3B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BA |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC3-4 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2N2222AC3B |
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9192
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Sustaining Voltage
IC = 10mA
IB = 0
50
V
ICES
Collector-Emitter
Cut-Off Current
VCE = 50V
50
nA
IE = 0
VCB = 75V
10
A
IE = 0
VCB = 60V
10
nA
ICBO
Collector-Base
Cut-Off Current
TA = 150°C
10
A
IC = 0
VEB = 4V
10
nA
IEBO
Emitter Cut-Off Current
VEB = 6V
10
A
ON CHARACTERISTICS
IC = 150mA
IB = 15mA
0.3
VCE(Sat)
(1)
Collector-Emitter
Saturation Voltage
IC = 500mA
IB = 50mA
1.0
V
IC = 150mA
IB = 15mA
0.6
1.2
VBE(Sat)
(1)
Base-Emitter
Saturation Voltage
IC = 500mA
IB = 50mA
2.0
V
IC = 0.1mA
VCE = 10V
50
IC = 1.0mA
VCE = 10V
75
325
IC = 10mA
VCE = 10V
100
TA = -55°C
35
IC = 150mA
VCE = 10V
(1)
100
300
hFE
DC Current Gain
IC = 500mA
VCE = 10V
(1)
30
-
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1.0MHz
8
Cibo
Input Capacitance
VEB = 0.5V
IC = 0
f = 1.0MHz
25
pF
|
hfe|
Magnitude of small-
signal, short-circuit
forward current transfer
ratio
IC = 20mA
VCE = 20V
f = 100MHz
2.5
-
hfe
Small Signal Current
Gain
IC = 1.0mA
VCE = 10V
f = 1.0kHz
50
-
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2222AC3C | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON SWITCHING NPN TRANSISTOR |
| 2N2222ACSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELNPN40V0.6ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,NPN,40V,0.6A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,NPN,40V,0.6A,LCC1; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:500mW; DC Collector Current:800mA; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N2222ACSM_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON SWITCHING NPN TRANSISTOR |
| 2N2222ACSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 2N2222AD | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
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