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參數(shù)資料
| 型號(hào)： | 2N2222AB-# |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2N2222AB-# |
2
Electrical Characteristics @ Tj = 25
°C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Breakdown Voltage, Collector to Base
Bias Cond. D, IC=10uAdc
75
Vdc
V(BR)EBO
Breakdown Voltage, Emitter to Base
Bias Cond. D, IE=10uAdc
6
Vdc
V(BR)CEO
Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC= 10mAdc, pulsed
50
Vdc
ICES
Collector to Emitter Cutoff Current
Bias Cond. D, VCE=50Vdc
50 nAdc
ICBO1
Collector to Base Cutoff Current
Bias Cond. D, VCB=60Vdc
10 nAdc
IEBO
Emitter to Base Cutoff Current
Bias Cond. D, VEB= 4Vdc
10 nAdc
ON CHARACTERISTICS
hFE1
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
50
hFE2
Forward-Current Transfer Ratio
VCE=10Vdc, IC=1.0mAdc
75
325
hFE3
Forward-Current Transfer Ratio
VCE=10Vdc, IC=10mAdc
100
hFE4
Forward-Current Transfer Ratio
VCE=10Vdc, IC=150mAdc, pulsed
100
300
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=500mAdc, pulsed
30
VCE(sat)1
Collector to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.3 Vdc
VCE(sat)2
Collector to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
1 Vdc
VBE(sat)1
Base to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.6
1.2 Vdc
VBE(sat)2
Base to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
2 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
50
/hfe/
Magnitude of Short Circuit Forward
VCE= 20Vdc,IC =50mAdc, f=100MHz
2.5
Current Transfer Ratio
Cobo
Output Capacitance
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
8 pF
Cibo
Input Capacitance
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
25 pF
SWITCHING CHARACTERISTICS
ton
Saturated Turn-on Time
As defined in 19500/255 Figure 8
45 nS
toff
Saturated Turn-off Time
As defined in 19500/255 Figure 9
300 nS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2222AB-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABC | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222ABC-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
| 2N2222A-BP | 功能描述:兩極晶體管 - BJT 800mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2222ABS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR NPN SILICON |
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