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參數(shù)資料
| 型號(hào)： | 2N2218 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 71K |
| 代理商： | 2N2218 |
ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CBO
Collector Cutoff Current
(IE =0)
VCB =50 V
T amb =150
°C
10
nA
A
I EBO
Emitter Cutoff Current
(IC =0)
VEB =3 V
10
nA
V(BR) CBO
Colllector-base Breakdown
Voltage (IE =0)
I C =10 A60
V
V(BR)CE O *
Collector-emitter Breakdown
Voltage (IB =0)
I C =10 mA
30
V
V(BR) EBO
Emittter-base Breakdown
Voltage (IC =0)
I E =10
A5
V
VCE (s at )*
Collector-emitter Saturation
Voltage
I C =150 mA
I C =500 mA
I B =15 mA
I B =50 mA
0.4
1.6
V
VB E (sat )*
Base-emitter Saturation
Voltage
I C =150 mA
I C =500 mA
I B =15 mA
I B =50 mA
1.3
2.6
V
h FE*
DC Current Gain
for 2N 221 8
I C = 0.1 mA
I C =1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =150 mA
for 2N 221 9
I C = 0.1 mA
I C =1 mA
I C =10 mA
I C =150 mA
I C =500 mA
I C =150 mA
and 2N 22 21
VCE =10 V
VCE =1 V
and 2N 22 22
VCE =10 V
VCE =1 V
20
25
35
40
20
35
50
75
100
30
50
120
300
f T
Transition Frequency
I C =20 mA
f = 100 MHz
VCE = 20 V
250
MHz
C CBO
Collector-base Capacitance
I E =0
f = 100 kHz
VCB =10 V
8
pF
Re(hie)
Real Part of Input
Impedance
I C =20 mA
f = 300 MHz
VCE =20 V
60
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
2 N22 18
2 N22 19
2N 222 1
2N 222 2
Rth j-cas e
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
50
°C/W
187.5
°C/W
83.3
°C/W
300
°C/W
2N2218-2N2219-2N2221-2N2222
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2218_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN-SWITCHING SILICON TRANSISTOR |
| 2N2218-2N2219 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH-SPEED SWITCHES |
| 2N2218A | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2218AJANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 |
| 2N2218AJTX | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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