參數(shù)資料
型號: 2N2218
廠商: MICROSEMI CORP
元件分類: 小信號晶體管
英文描述: NPN SWITCHING SILICON TRANSISTOR
中文描述: 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
封裝: TO-39, 3 PIN
文件頁數(shù): 1/1頁
文件大?。?/td> 11K
代理商: 2N2218
2N5015
Bipolar NPN Device.
V
CEO
= 1000V
I
C
= 0.5A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
1000
V
I
C(CONT)
0.5
A
h
FE
@ 10/25m (V
CE
/ I
C
)
30
180
-
f
t
20M
Hz
P
D
2
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
(0.89
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
(2.54
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
相關PDF資料
PDF描述
2N2218AL NPN SWITCHING SILICON TRANSISTOR
2N6463 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
2N3202 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
2N2218 Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
2N5039 POWER TRANSISTORS(20A,140W)
相關代理商/技術參數(shù)
參數(shù)描述
2N2218_1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN-SWITCHING SILICON TRANSISTOR
2N2218-2N2219 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH-SPEED SWITCHES
2N2218A 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2218AJANTXV 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39
2N2218AJTX 制造商:Rochester Electronics LLC 功能描述:- Bulk