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參數資料
| 型號： | 2N2217 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封裝： | TO-5, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 239K |
| 代理商： | 2N2217 |
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2N2217 Information
Category Transistors
2N2217 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 60
I(C) Max. (A) : 800m
Absolute Max. Power Diss. (W) : 800m
Maxim um Operating Tem p (шC) : 200х
I(CBO) Max. (A) : 10n
@V(CBO) (V) (Test Condition) : 50
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 60
@I(C) (A) (Test Condition) : 150m
@V(CE) (V) (Test Condition) : 10
f(T) Min. (Hz) Transition Freq : 250M
@I(C) (A) (Test Condition) : 20m
@V(CE) (V) (Test Condition) : 20
V(CE)sat Max. (V) : .40
@I(C) (A) (Test Condition) : 150m
@I(B) (A) (Test Condition) : 15m
h(fe) Min. SS Current gain. : 2.5
@I(C) (A) (Test Condition) : 20m
@V(CE) (V) (Test Condition) : 20
@Freq. (Hz) (Test Condition) : 100M
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-5
Mounting Style : T
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N2218 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 30V 0.8A 3PIN TO-39 - Bulk |
| 2N2218_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN-SWITCHING SILICON TRANSISTOR |
| 2N2218-2N2219 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH-SPEED SWITCHES |
| 2N2218A | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2218AJANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 |
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