參數(shù)資料
型號: 2N2151
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 功率晶體管
英文描述: 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX
中文描述: 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-111
文件頁數(shù): 2/3頁
文件大小: 69K
代理商: 2N2151
MSC0942A.DOC 11-03-98
2N2151
ELECTRICAL CHARACTERISTICS
(25
°
Case Temperature Unless Otherwise Noted)
VALUE
Min.
150
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Max
----
Units
BV
CBO
*
Collector-Base Voltage
I
C
= 100
μ
Adc, Cond. D
Vdc
BV
CEO
*
Collector-Emitter
Voltage (Note 1)
I
C
= 50 mAdc, Cond. D
100
----
Vdc
BV
EBO
*
I
CEO
*
Emitter-Base Voltage
Collector-Emitter
Cutoff Current
Collector-Emitter
Cutoff Current
Collector-Base
Cutoff Current
I
E
= 2
μ
Adc, Cond. D
V
CE
= 120 Vdc Cond. D
8
----
Vdc
μ
Adc
----
5
I
CEX
*
V
CE
= 120 Vdc, V
EB
= 0.5 Vdc, Cond. A
V
CE
= 120 Vdc, V
EB
= 0.5 Vdc, Cond. A T
A
= 150
°
C
V
CB
= 120 Vdc, Cond. D
----
----
----
5
100
5
μ
Adc
μ
A
μ
Adc
I
CBO
*
hFE*
DC Current Gain
(Note 1)
I
C
= 1 Adc, V
CE
= 5 Vdc
I
C
= 0.5 Adc, V
CE
= 5 Vdc
I
C
= 0.1 Adc, V
CE
= 5 Vdc
I
C
= 0.1 Adc, V
CE
= 30 Vdc, f = 1 KHz
I
C
= 1 Adc, I
B
= 0.1 Adc
40
40
40
120
120
----
----
----
----
hFE*
V
CE(sat)
*
AC Current Gain
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base On-Voltage
(Note 1)
Gain-Bandwidth
Product
Output Capacitance
40
160
----
----
1.0
Vdc
V
BE(sat)*
I
C
= 1 Adc, I
B
= 0.1 Adc
----
1.2
Vdc
V
BE(on)
*
I
C
= 1 Adc, V
CE
= 2 Vdc
----
1.2
Vdc
f
T
*
I
C
= 1 Adc, V
CE
= 30 Vdc, f = 10 MHz
10
70
MHz
C
ob
*
V
CB
= 20 Vdc, 1
E
= 0, f = 1 MHz
----
160
pf
Note 1: Pulse Test: PW = 300
μ
s, Duty Cycle
2%.
* Indicates JEDEC registered data.
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