- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371452 > 2N2150 (MICROSEMI CORP-LAWRENCE) NPN POWER SILICON TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2N2150 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN POWER SILICON TRANSISTOR |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-111 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | 2N2150 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 277
Devices
Qualified Level
2N2150
2N2151
JANTX
MAXIMUM RATINGS (T
C
= 25
0
C unless otherwise noted)
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
c
= +100
0
C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.3 W/
0
C for T
C
> +100
0
C
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Value
100
150
8.0
2.0
2.0
30
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
Symbol
R
θ
JC
Max.
3.3
Unit
0
C/W
TO-111*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 100
μ
Adc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
Collector-Emitter Cutoff Current
V
CE
= 120 Vdc, V
BE
= -1.0 Vdc
Emitter-Base Cutoff Current
V
EB
= 8.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 120 Vdc, V
BE
= 0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
V
(BR)
CEO
100
Vdc
V
CBO
150
Vdc
CEO
10
μ
Adc
I
CBO
5.0
μ
Adc
I
CEX
5.0
μ
Adc
I
EBO
2.0
μ
Adc
I
CES
5.0
μ
Adc
120101
Page 1 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N2151 | 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX |
| 2N2270AL | NPN |
| 2N2273 | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2N2323A | SILICON CONTROLLED RECTIFIER |
| 2N2323AS | SILICON CONTROLLED RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2151 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 2A 4PIN TO-111 - Bulk |
| 2N2152 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | TO-36 |
| 2N2152A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | TO-67 |
| 2N2153 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30A I(C) | TO-36 |
| 2N2154 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 30A I(C) | TO-36 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。