參數(shù)資料
型號(hào): 2N1598
廠商: Electronic Theatre Controls, Inc.
英文描述: SILICON THYRISTOR(low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit)
中文描述: 硅晶閘管(低電流可控硅的三引腳封裝整流器的理想選擇印刷電路)
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 94K
代理商: 2N1598
COMSET SEMICONDUCTORS
2/2
2N1595 thru 2N1599
Symbol
Ratings
2N1595
2N1596
2N1597
2N1598
2N1599
I
DRM
Peak Forward Blocking Current
(Rated
V
DRM
with gate
open
,
T
J
=125°C)
Max :1.0
mA
I
GT
Gate Trigger Current (2)
Anode Voltage=7.0 Vdc,
R
L
=12
Typ : 2.0
Max : 10
Typ : 0.7
Max : 3.0
Min : 0.2
mA
Gate Trigger Voltage
Anode Voltage=7.0 Vdc,
R
L
=12
V
DRM
= Rated,
R
L
=100
,
T
J
=125°C
V
GT
V
I
H
Holding Current
Anode Voltage=7.0 Vdc, gate open
Typ : 5.0
mA
V
TM
Forward On Voltage
I
T
=1 Adc
Typ : 1.1
Max : 2.0
V
t
gt
Turn-On Time (t
d
+t
r
)
I
GT
=10 mA,
I
T
=1 A
Turn-Off Time
I
T
=1 A,
I
R
=1 A, dv/dt=20 V/
μ
s,
T
J
=125°C
V
DRM
= Rated Voltage
Typ : 0.8
μ
s
t
q
Typ : 10
μ
s
* V
DRM
or
V
RSM
can be applied for all types on a continuous dc basis without incurring damage.
MECHANICAL DATA CASE TO-39
DIMENSIONS
mm inches
6,25
13,59
9,24
8,24
0,78
1,05
0,42
45°
5,1
A
B
C
D
E
F
G
H
L
0,24
0,53
0,36
0,32
0,03
0,041
0,165
0,2
Pin 1 :
Pin 2 :
Pin 3 :
Cathode
Gate
Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
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參數(shù)描述
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