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參數(shù)資料
| 型號： | 2N1486 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON MEDIUM POWER TRANSISTOR |
| 中文描述： | 3 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2N1486 |
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/ 207
Devices
Qualified Level
2N1483
2N1484
2N1485
2N1486
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
2N1483
2N1485
40
60
2N1484
2N1486
55
100
12
3.0
1.75
25
-65 to +200
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
Operating & Storage Junction Temperature Range
1) Derate linearly 0.010 W/
0
C for T
A
> 25
0
C
2) Derate linearly 0.143 W/
0
C for T
C
> 25
0
C
V
CEO
V
CBO
V
EBO
I
C
Vdc
Vdc
Vdc
Adc
W
W
0
C
@ T
A
= 25
0
C
(1)
@ T
C
= 25
0
C
(2)
P
T
T
J
,
T
stg
TO-8*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Base Breakdown Voltage
I
C
= 100
μ
Adc
Collector-Emitter Breakdown Voltage
V
EB
= 1.5 Vdc, I
C
= 0.25 mAdc
Collector-Base Cutoff Current
V
CB
= 30 Vdc
V
CB
= 50 V
dc
Emitter-Base Cutoff Current
V
EB
= 12 Vdc
2N1483, 2N1485
2N1484, 2N1486
V
(BR)CEO
V
(BR)CBO
40
55
60
100
Vdc
2N1483, 2N1485
2N1484, 2N1486
Vdc
2N1483, 2N1485
2N1484, 2N1486
V
(BR)CEX
I
CBO
60
100
Vdc
2N1483, 2N1485
2N1484, 2N1486
15
15
μ
Adc
I
EBO
15
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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