參數(shù)資料
型號： 2MBI600VN-120-50
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： 600 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-11
文件頁數(shù)： 3/3頁
文件大小： 596K
代理商： 2MBI600VN-120-50
33
IGBT Modules
2MBI600VN-120-50
Reverse bias safe operating area (max.)
+Vge=15V, -Vge=15V, Rg=0.62Ω, Tj=150°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, Vge=±15V, Tj=125°C, 150°C
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=0.62Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=0.62Ω, Tj=125°C, 150°C
Vcc=600V, Vge=±15V, Rg=0.62Ω, Tj=25°C
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, Vge=±15V, Tj=125°C, 150°C
10
100
1000
10000
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
10
100
1000
10000
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
10
100
1000
10000
0.1
1
10
100
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
0
50
100
150
200
250
0
500
1000
1500
Collector current: Ic [A]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eon
Eoff
Err
Tj=125oC
Tj=150oC
0
100
200
300
400
0
1
10
100
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eoff
Err
Eon
Tj=125oC
Tj=150oC
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
Collector-Emitter voltage: Vce [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2MBI600VXA-120E-50 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:3.35kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module;;RoHS Compliant: Yes
2MBI650VXA-170E-50 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 650A/1700V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 650A/1700V, Transistor Polarity:Dual N Channel, DC Collector Current:900A, Collector Emitter Voltage Vces:2.1V, Power Dissipation Pd:4.15kW, Collector Emitter Voltage V(br)ceo:1.7kV, Transistor Case Style:Module, , RoHS Compliant: Yes 制造商:Fuji Electric 功能描述:IGBT Module Dual 650A 1700V Cu 172x89mm
2MBI75-060 制造商:Fuji Electric 功能描述:
2MBI75-120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C)
2MBI75F-060 制造商:Fuji Electric 功能描述:
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