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參數(shù)資料
| 型號： | 2MBI50N-120 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | M232, 7 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2MBI50N-120 |
IGBT MODULE ( N series )
n
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (
4~5 Times Rated Current)
n
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
n Outline Drawing
n
n Maximum Ratings and Characteristics
Absolute Maximum Ratings ( T
c=25°C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
VCES
1200
V
Gate -Emitter Voltage
VGES
± 20
V
Continuous
IC
50
Collector
1ms
IC PULSE
100
Current
Continuous
-IC
50
1ms
-IC PULSE
100
Max. Power Dissipation
PC
400
W
Operating Temperature
Tj
+150
°C
Storage Temperature
Tstg
-40
+125
°C
Isolation Voltage
A.C. 1min.
Vis
2500
V
Mounting *1
3.5
Terminals *2
3.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5)
Electrical Characteristics ( at T
j=25°C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
ICES
VGE=0V VCE=1200V
1.0
mA
Gate-Emitter Leackage Current
IGES
VCE=0V VGE=
± 20V
15
A
Gate-Emitter Threshold Voltage
VGE(th)
VGE=20V IC=50mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
VCE(sat)
VGE=15V IC=50A
3.3
V
Input capacitance
Cies
VGE=0V
8000
Output capacitance
Coes
VCE=10V
2900
pF
Reverse Transfer capacitance
Cres
f=1MHz
2580
tON
VCC=600V
0.65
1.2
tr
IC=50A
0.25
0.6
tOFF
VGE=
± 15V
0.85
1.5
tf
RG=24
0.35
0.5
Diode Forward On-Voltage
VF
IF=50A VGE=0V
3.0
V
Reverse Recovery Time
trr
IF=50A
350
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
IGBT
0.31
Thermal Resistance
Rth(j-c)
Diode
0.85
°C/W
Rth(c-f)
With Thermal Compound
0.05
n
n Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
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