參數(shù)資料
型號(hào): 2MBI450UE-120
英文描述: DUAL IGBT
中文描述: 雙IGBT的
文件頁(yè)數(shù): 9/13頁(yè)
文件大?。?/td> 748K
代理商: 2MBI450UE-120
H04-004-03a
MS5F 5618
13
a
9
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125
/ chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Vcc=300V
,
Ic=400A
,
Tj= 25
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25
/ chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25
C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
200
400
600
800
1000
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V15V 12V
10V
8V
0
200
400
600
800
1000
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V15V
12V
10V
8V
0
200
400
600
800
1000
0
1
2
3
4
C
Collector-Emitter voltage : VCE [V]
Tj=125
Tj=25
0.0
2.0
4.0
6.0
8.0
10.0
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=800A
Ic=400A
Ic=200A
0.1
1.0
10.0
100.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
400
800
1200
1600
C
G
Gate charge : Qg [ nC ]
VGE
VCE
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