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參數(shù)資料
| 型號： | 2MBI1200U4G-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 1600 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-10 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 480K |
| 代理商： | 2MBI1200U4G-170 |
1
2MBI1200U4G-170
IGBT Modules
IGBT MODULE (U series)
1700V / 1200A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
VCES
1700
V
Gate-Emitter voltage
VGES
±20
V
Collector current
Ic
Continuous
Tc=25°C
1600
A
Tc=80°C
1200
Icp
1ms
Tc=25°C
3200
Tc=80°C
2400
-Ic
1200
-Ic pulse
1ms
2400
Collector power dissipation
Pc
1 device
6250
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +125
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
3400
VAC
Screw torque (*2)
Mounting
5.75
N m
Main Terminals
10
Sense Terminals
2.5
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Zero gate voltage collector current
ICES
VGE = 0V, VCE = 1700V
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V, VGE = ±20V
-
1600
nA
Gate-Emitter threshold voltage
VGE (th)
VCE = 20V, IC = 1200mA
5.5
6.5
7.5
V
Collector-Emitter saturation voltage
VCE (sat)
(main terminal) VGE = 15V
IC = 1200A
Tj=25°C
-
2.57
2.76
V
Tj=125°C
-
2.97
-
VCE (sat)
(chip)
Tj=25°C
-
2.25
2.40
Tj=125°C
-
2.65
-
Input capacitance
Cies
VCE = 10V, VGE = 0V, f = 1MHz
-
112
-
nF
Turn-on time
ton
VCC = 900V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Rgon = 4.7, Rgoff = 1.2
-
3.10
-
s
tr
-
1.25
-
Turn-off time
toff
-
1.45
-
tf
-
0.25
-
Forward on voltage
VF
(main terminal) VGE = 0V
IF = 1200A
Tj=25°C
-
2.12
2.51
V
Tj=125°C
-
2.32
-
VF
(chip)
Tj=25°C
-
1.80
2.15
Tj=125°C
-
2.00
-
Reverse recovery time
trr
IF = 1200A
-
0.45
-
s
Lead resistance, terminal-chip (*3)
R lead
-
0.27
-
m
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Thermal resistance (1device)
Rth(j-c)
IGBT
-
0.020
°C/W
FWD
-
0.033
Contact thermal resistance (1device)
Rth(c-f)
with Thermal Compound (*4)
-
0.006
-
Note *4: This is the value which is dened mounting on the additional cooling n with thermal compound.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2MBI1200UG-170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT MODULE |
| 2MBI1400VXB-120P-50 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL,1400A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:1.8kA; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.65kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case ;RoHS Compliant: Yes |
| 2MBI150-060 | 制造商:Fuji Electric 功能描述: |
| 2MBI150-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 150A I(C) |
| 2MBI150F-060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE ( F Series ) |
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