參數(shù)資料
型號： 2MBI100U4H-170
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： IGBT MODULE
中文描述： 150 A, 1700 V, N-CHANNEL IGBT
封裝： MODULE-4
文件頁數(shù)： 4/13頁
文件大小： 450K
代理商： 2MBI100U4H-170
H04-004-03a
4
MS5F6143
13
a
b
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*4) Biggest internal terminal resistance among arm.
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip(*4)
ton
tr
tr (i)
Input capacitance
Turn-on time
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
VGE(th)
Items
-
-
-
Ic = 100mA
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE=15V
Ic = 100A
4.5
VCE = 20V
-
-
Rg = 4.7
Ω
-
-
-
Tj=125°C
-
trr
VGE=0V
VCE(sat)
(terminal)
Cies
VCE=10V,VGE=0V,f=1MHz
Vcc = 900V
Ic = 100A
toff
tf
VCE(sat)
(chip)
μ
s
IF = 100A
IF = 100A
-
0.6
Tj= 25°C
-
1.85
2.05
2.20
-
V
2.00
1.80
2.15
-
μ
s
1.50
0.30
0.09
1.20
0.60
-
Items
Symbols
Conditions
VCES
VGES
Collector-Emitter voltage
Gate-Emitter voltage
100
300
200
100
200
540
1ms
Continuous
V
V
±20
150
1700
AC : 1min.
1ms
1 device
W
Collector current
Junction temperature
Storage temperature
Collector Power Dissipation
150
Ic
Icp
Units
-Ic
Tj
min.
Characteristics
typ.
-40 ~ +125
A
°C
Isolation
voltage
between terminal and copper base (*1)
max.
3400
VAC
4.5
3.5
N m
Viso
-Ic pulse
Pc
Tstg
Screw
Torque
-
Mounting (*2)
Terminals (*3)
Symbols
VGE=±20V
VCE = 0V
Conditions
VGE = 0V
VCE = 1700V
IGES
ICES
nA
1.0
mA
200
6.5
-
-
-
V
-
8.5
V
Units
-
-
-
-
2.25
2.65
9
0.62
0.39
2.40
-
-
Maximum
Ratings
-
-
2.35
2.75
2.50
-
0.05
0.55
VF
(terminal)
VF
(chip)
nF
Tj= 25°C
Tj=125°C
VGE=±15V
m
Ω
R lead
-
0.53
a
a
a
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