參數(shù)資料
型號(hào)： 2DC4617Q-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
英文描述： 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA MINIATURE, PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 68K
代理商： 2DC4617Q-13
DS30252 Rev. 6 - 2
1 of 3
2DC4617Q/R/S
www.diodes.com
Diodes Incorporated
2DC4617Q/R/S
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Ultra Miniature Surface Mount Package
Complementary PNP Type Available (2DA1774Q,R,S)
Available in Lead Free/RoHS Compliant Version
(Note 3)
Characteristic
Symbol
2DC4617Q/R/S
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current - Continuous (Note 1)
IC
150
mA
Power Dissipation (Note 1)
Pd
150
mW
A
M
J
L
D
B
N
C
H
K
G
C
E
B
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See diagram
Also Available in Lead Free Plating (Matte Tin annealed
over Alloy 42 leadframe). Please See Ordering Information,
Note 5, on Page 3
Marking (See Last Page):
2DC4617Q: 8D
2DC4617R: 8E
2DC4617S: 8F
Ordering Information: See Last Page
Weight: 0.002 grams (approx.)
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V
IC = 50
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
50
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
7.0
V
IE = 50
mA, IC = 0
Collector Cutoff Current
ICBO
100
nA
VCB = 60V
Emitter Cutoff Current
IEBO
100
nA
VEB = 7.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
2DC4617Q
2DC4617R
2DC4617S
hFE
120
180
270
390
560
VCE = 6.0V, IC = 1.0mA
Collector-Emitter Saturation Voltage
VCE(SAT)
0.4
V
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
2.0 Typ.
3.5
pF
VCB = 12V, f = 1.0MHz, IE = 0
Current Gain-Bandwidth Product
fT
180 Typ.
MHz
VCE = 12V, IE = -2mA, f = 1MHz
T
C
U
D
O
R
P
W
E
N
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
a
0
°
8
°
All Dimensions in mm
Features
Characteristic
Symbol
2DC4617Q/R/S
Unit
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
833
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Thermal Characteristics @ TA = 25°C unless otherwise specified
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2DC4617Q-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2DC4617Q-7-F 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2DC4617QLP 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DC4617QLP_11 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DC4617QLP-7 功能描述:兩極晶體管 - BJT 250mW 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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