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參數(shù)資料
| 型號(hào)： | 2C4261 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2C4261 |
Chip Type 2C4261
Geometry 0014
Polarity PNP
Data Sheet No. 2C4261
Generic Packaged Parts:
2N4260, 2N4261
Chip type 2C4261 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
2N4261, 2N4261UB, 2N4260, 2N4260UB,
SD4261, SD4261F, SQ4261, SQ4261F
APPLICATIONS:
Designed for low voltage, low gain RF
amplifier applications.
Features:
Special Characteristics
ft = 1.8 GHz (typ) at 10 mA/10V
Top
Al - 12 k min.
Backside
Au - 6.5 k nom.
Emitter
2.1 mils x 2.1 mils
Base
2.1 mils x 2.1 mils
Die Thickness
Chip Area
Top Surface
16 mils x 16 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter
Test conditions
Min
Max
Unit
BVCEO
IC = 10.0 mA, IB = 0
15
---
V dc
BVCBO
IC = 10 A, IE = 0
15
---
V dc
BVEBO
IE = 10 A, IC= 0
4.5
---
V dc
hFE
IC = 10 mA dc, VCE = 1.0 V dc
30
150
---
Electrical Characteristics
TA = 25
oC
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 s, duty cycle less than 2%.
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