參數(shù)資料
型號(hào): 2B649A
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial(外延PNP晶體管)
中文描述: 硅外延進(jìn)步黨(外延進(jìn)步黨晶體管)
文件頁數(shù): 4/8頁
文件大小: 42K
代理商: 2B649A
2B649, 2SB649A
4
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
I
Cmax
(–13.3 V, –1.5 A)
(–40 V, –0.5 A)
DC Operation (T
C
= 25
°
C)
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
2SB649
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–1
–3
–10
Collector to emitter voltage V
CE
(V)
–30
–100
–300
C
C
T
C
= 25
°
C
P
C
=20W
Typical Output Characteristics
–50
–1.0
–0.8
–0.6
–0.4
–0.2
0
–10
–40
–20
I
B
= 0
–0.5 mA
–1.0
–1.5
–2.0
–2.5
–40
–.
–30
–50
Collector to emitter voltage V
CE
(V)
C
C
Typical Transfer Characteristics
–500
–100
C
C
–10
–1
0
–0.4
Base to emitter voltage V
BE
(V)
–0.8
–0.2
–0.6
–1.0
V
CE
= –5 V
T
°
C
2
相關(guān)PDF資料
PDF描述
2DA1774Q-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774R-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774S-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774Q PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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