參數(shù)資料
型號(hào): 2B649
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial(外延PNP晶體管)
中文描述: 硅外延進(jìn)步黨(外延進(jìn)步黨晶體管)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 42K
代理商: 2B649
2B649, 2SB649A
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Ratings
Item
Symbol
2SB649
2SB649A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
Tj
–180
–180
V
Collector to emitter voltage
–120
–160
V
Emitter to base voltage
–5
–5
V
Collector current
–1.5
–1.5
A
Collector peak current
–3
–3
A
Collector power dissipation
1
1
W
1
20
20
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–55 to +150
–55 to +150
相關(guān)PDF資料
PDF描述
2B649A Silicon PNP Epitaxial(外延PNP晶體管)
2DA1774Q-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774R-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774S-7-F PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
2DA1774Q PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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