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參數(shù)資料
| 型號(hào)： | 29MT050XH |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 500 V, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MTP, 12 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 29MT050XH |
1
29MT050XH
Target Data 05/01
VDSS = 500V
RDS(on) typ. = 0.087
ID = 46A
@ TC = 25°C
Low On-Resistance
High Performance Optimised Built-in Fast
Recovery Diodes
Fully Characterized Capacitance and
Avalanche Voltage and Current
Optional SMT Thermystor Inside
Aluminum Nitride DBC
Very Low Stray Inductance Design for
HighSpeedOperation
Features
Absolute Maximum Ratings
"HALF-BRIDGE" FREDFET MTP
ID
Continuos Drain Current @ VGS = 10V
@ TC = 25°C
46
A
@ TC = 100°C
29
IDM
Pulsed Drain Current
(1)
180
PD
Maximum Power Dissipation
@ TC = 25°C
800
W
@ TC = 100°C
320
VGS
Gate-to-Source Voltage
± 30
V
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
dv/dt
Peak Diode Recovery dv/dt
(3)
25
V/ ns
Parameters
Max
Units
HEXFET Power MOSFET
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Low Trr and Soft Diode Reverse Recovery
Optimized for Welding, UPS and SMPS Applications
Outstanding ZVS and High Frequency Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
VeryLowJunction-to-CaseThermalResistance
Benefits
MMTP
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