參數(shù)資料
型號(hào): 29LV800BT-90
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 800萬位[1Mx8/512K x16] CMOS單電壓3V時(shí)僅閃存
文件頁數(shù): 23/63頁
文件大?。?/td> 765K
代理商: 29LV800BT-90
23
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
29LV800BT/BB-70
MIN.
70
29LV800BT/BB-90
MIN.
90
SYMBOLPARAMETER
tRC
Read Cycle Time (Note 1)
MAX.
MAX.
UNIT CONDITIONS
ns
tACC
Address to Output Delay
70
90
ns
CE#=OE#=VIL
tCE
CE# to Output Delay
70
90
ns
OE#=VIL
tOE
OE# to Output Delay
30
35
ns
CE#=VIL
tDF
OE# High to Output Float (Note1)
0
25
0
30
ns
CE#=VIL
tOEH
Output Enable Read
0
0
ns
Hold Time
Toggle and Data# Polling10
10
ns
tOH
Address to Output hold
0
0
ns
CE#=OE#=VIL
NOTE:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
TEST CONDITIONS:
Input pulse levels: 0V/3.0V.
Input rise and fall times is equal to or less than 5ns.
Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV800T/B-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV800BT/BB-70
Reference levels for measuring timing: 1.5V.
AC CHARACTERISTICS TA = -40
o
C to 85
o
C, VCC = 2.7V~3.6V
TABLE 10. READ OPERATIONS
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