參數(shù)資料
型號: 29LV800BB-90
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 800萬位[1Mx8/512K x16] CMOS單電壓3V時僅閃存
文件頁數(shù): 26/63頁
文件大小: 765K
代理商: 29LV800BB-90
26
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
AC CHARACTERISTICS TA = -40
o
C to 85
o
C, VCC = 2.7V~3.6V
TABLE 11. Erase/Program Operations
29LV800BT/BB-70
29LV800BT/BB-90
SYMBOL
PARAMETER
MIN.
MAX.
MIN.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
70
90
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
ns
(OE# High to WE# Low)
tCS
CE# Setup Time
0
0
ns
tCH
CE# Hold Time
0
0
ns
tWP
Write Pulse Width
35
35
ns
tWPH
Write Pulse Width High
30
30
ns
tWHWH1
Programming Operation (Note 2)
9/11(TYP.)
9/11(TYP.)
us
(Byte/Word program time)
tWHWH2
Sector Erase Operation (Note 2)
0.7(TYP.)
0.7(TYP.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
us
tRB
Recovery Time from RY/BY#
0
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
90
90
ns
tWPP1
Write Pulse Width for Sector Protect
100ns
10us
100ns
10us
(A9, OE# Control)
(Typ.)
(Typ.)
tWPP2
Write Pulse Width for Chip Unprotected
100ns
12ms
100ns
12ms
(A9, OE# Control)
(Typ.)
(Typ.)
tBAL
Sector Address Load Time
50
50
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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