參數(shù)資料
型號: 29LV800BB-70
廠商: Macronix International Co., Ltd.
英文描述: 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 800萬位[1Mx8/512K x16] CMOS單電壓3V時(shí)僅閃存
文件頁數(shù): 54/63頁
文件大?。?/td> 765K
代理商: 29LV800BB-70
54
P/N:PM1062
MX29LV800BT/BB
REV. 1.3, DEC. 20, 2004
LIMITS
TYP.(2)
PARAMETER
MIN.
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
14
sec
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
Chip Programming Time
Byte Mode
9
27
sec
Word Mode
5.8
17
sec
Erase/Program Cycles
100,000
Cycles
TABLE 16. ERASE AND PROGRAMMING PERFORMANCE (1)
Note:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25
°
C, 3V.
3. Maximum values measured at 25
°
C, 2.7V.
MIN.
-1.0V
-1.0V
-1.0V
-100mA
MAX.
12.5V
Input Voltage with respect to GND on ACC, OE#, RESET#, A9
Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
VCC + 1.0V
VCC + 1.0V
+100mA
TABLE 17. LATCH-UP CHARACTERISTICS
相關(guān)PDF資料
PDF描述
29LV800BB-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-70 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 8M (1M x 8/512 K x 16) BIT
29LV800TE 8M (1M x 8/512 K x 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV800BB-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29LV800BT-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800TE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT