參數(shù)資料
型號: 29LV400C-70
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
中文描述: 4分位[為512k × 8 / 256K × 16] CMOS單電壓3V時僅閃存
文件頁數(shù): 24/68頁
文件大?。?/td> 906K
代理商: 29LV400C-70
24
P/N:PM1155
MX29LV400C T/B
REV. 1.5, APR. 24, 2006
29LV400C-55R
29LV400C-70
29LV400C-90
SYMBOL PARAMETER
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
55
70
90
ns
tAS
Address Setup Time
0
0
0
ns
tAH
Address Hold Time
45
45
45
ns
tDS
Data Setup Time
35
35
45
ns
tDH
Data Hold Time
0
0
0
ns
tOES
Output Enable Setup Time
0
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
0
ns
(OE# High to WE# Low)
tCS
CE# Setup Time
0
0
0
ns
tCH
CE# Hold Time
0
0
0
ns
tWP
Write Pulse Width
35
35
35
ns
tWPH
Write Pulse Width High
30
30
30
ns
tWHWH1 Programming Operation (Note 2)
9/11
9/11
9/11
us
(Byte/Word program time)
(Typ.)
(Typ.)
(Typ.)
tWHWH2 Sector Erase Operation (Note 2)
0.7
0.7
0.7
sec
(Typ.)
(Typ.)
(Typ.)
tVCS
VCC Setup Time (Note 1)
50
50
50
us
tRB
Recovery Time from RY/BY#
0
0
0
ns
tBUSY
Program/Erase Vaild to RY/BY# Delay
90
90
90
ns
tWPP1
Write Pulse Width for Sector Protect
100ns
10us
100ns
10us
100ns
10us
(A9, OE# Control)
(Typ.)
(Typ.)
(Typ.)
tWPP2
Write Pulse Width for Sector Unprotect
100ns
12ms
100ns
12ms
100ns
12ms
(A9, OE# Control)
(Typ.)
(Typ.)
(Typ.)
tBAL
Sector Address Load Time
50
50
50
us
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
AC CHARACTERISTICSTA = -40
o
C to 85
o
C, VCC = 2.7V~3.6V
Table 11. Erase/Program Operations
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