參數(shù)資料
型號: 29LV040C-90
廠商: Macronix International Co., Ltd.
英文描述: 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
中文描述: 4分位[為512k × 8] CMOS單電壓3V只等于部門閃存
文件頁數(shù): 44/52頁
文件大?。?/td> 499K
代理商: 29LV040C-90
44
P/N:PM1149
MX29LV040C
REV. 1.3, APR. 24, 2006
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
VCC + 1.0V
Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: VCC = 3.0V, one pin at a time.
LIMITS
TYP.(2)
PARAMETER
MIN.
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
4
32
sec
Byte Programming Time
9
300
us
Chip Programming Time
4.5
13.5
sec
Erase/Program Cycles
100,000
Cycles
Table 13. LATCH-UP CHARACTERISTICS
Table 12. ERASE AND PROGRAMMING PERFORMANCE (1)
Note:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25
°
C, 3V.
3.Maximum values measured at 25
°
C, 2.7V.
Table 14. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150
°
C
10
Years
Data Retention Time
125
°
C
20
Years
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