- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371440 > 29LV017B-70 (Macronix International Co., Ltd.) 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | 29LV017B-70 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 中文描述： | 1,600位[2Mx8] CMOS單電壓3V時僅閃存 |
| 文件頁數(shù)： | 12/55頁 |
| 文件大?。?/td> | 355K |
| 代理商： | 29LV017B-70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
12
P/N:PM1086
MX29LV017B
REV. 1.1, DEC. 07, 2004
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid com-
mand must then be written to place the device in the
desired state.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manu-
facturer and device codes must be accessible while the
device resides in the target system. PROM program-
mers typically access signature codes by raising A9 to
a high voltage (VID). However, multiplexing high volt-
age onto address lines is not generally desired system
design practice.
The MX29LV017B contains a Silicon-ID-Read operation
to supple traditional PROM programming methodology.
The operation is initiated by writing the read silicon ID
command sequence into the command register. Fol-
lowing the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H. A read
cycle with A1=VIL, A0=VIH returns the device code of
C8H for MX29LV017B.
The system must write the reset command to exit the
"Silicon-ID Read Command".
AUTOMATIC CHIP ERASE COMMANDS
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cy-
cles are then followed by the chip erase command 10H.
The device does not require the system to entirely pre-
program prior to executing the Automatic Chip Erase.
Upon executing the Automatic Chip Erase, the device
will automatically program and verify the entire memory
for an all-zero data pattern. When the device is auto-
matically verified to contain an all-zero pattern, a self-
timed chip erase and verify begin. The erase and verify
operations are completed when the data on Q7 is "1" at
which time the device returns to the Read mode. The
system is not required to provide any control or timing
during these operations.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required).
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE# or CE# pulse, whichever happens first in the
command sequence and terminates when either the data
on Q7 is "1" at which time the device returns to the
Read mode or the data on Q6 stops toggling for two
consecutive read cycles at which time the device re-
turns to the Read mode.
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is completed within a
time of tREADY (not during Embedded Algorithms). The
system can read data tRH after the RESET# pin returns
to VIH.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 22 for the timing diagram.
相關PDF資料 |
PDF描述 |
|---|---|
| 29LV017B-90 | 16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV040C-55R | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
| 29LV040C-70 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
| 29LV040C-90 | 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY |
| 29LV160BE | 16M (2M X 8/1M X 16) BIT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 29LV017B-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV02012JU | 制造商:undefined 功能描述: |
| 29LV020-12JU | 制造商:undefined 功能描述: |
| 29LV033C70EI | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 29LV033C-70EI | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。