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參數(shù)資料
| 型號： | 29F080-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY |
| 中文描述： | 800萬位[1024K × 8]的CMOS平等部門閃存 |
| 文件頁數(shù)： | 9/38頁 |
| 文件大?。?/td> | 678K |
| 代理商： | 29F080-90 |
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9
P/N:PM0579
REV. 1.6, NOV. 21, 2002
MX29F080
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the
device to be entirely pre-programmed prior to
executing the Automatic Set-up Sector Erase
command and Automatic Sector Erase command.
Upon executing the Automatic Sector Erase
command, the device will automatically program and
verify the sector(s) memory for an all-zero data
pattern. The system is not required to provide any
control or timing during these operations.
When the sector(s) is automatically verified to
contain an all-zero pattern, a self-timed sector erase
and verify begin. The erase and verify operations
are complete when the data on Q7 is "1" and the data
on Q6 stops toggling for two consecutive read
cycles, at which time the device returns to the Read
mode. The system is not required to provide any
control or timing during these operations.
When using the Automatic Sector Erase algorithm,
note that the erase automatically terminates when
adequate erase margin has been achieved for the
memory array (no erase verification command is
required). Sector erase is a six-bus cycle operation.
There are two "unlock" write cycles. These are
followed by writing the set-up command 80H. Two
more "unlock" write cycles are then followed by the
sector erase command 30H. The sector address is
latched on the falling edge of WE or CE, whichever
happens later , while the command (data) is latched
on the rising edge of WE or CE, whichever happens
first. Sector addresses selected are loaded into
internal register on the sixth falling edge of WE or CE,
whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 80us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3
to determine if the sector erase timer window is still
open, see section Q3, Sector Erase Timer.) Any
command other than Sector Erase (30H) or Erase
Suspend (B0H) during the time-out period resets the
device to read mode.
Status
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Q7
Q7
0
1
Q6
Q5
0
0
0
Q3
0
1
0
Q2
1
Toggle
Toggle
1
Toggle
Toggle
(Note1)
Data
Erase Suspend Read
(Erase Suspended Sector)
In Progress
Erase Suspended Mode Erase Suspend Read
Data
Data
Data
Data
(Non-Erase Suspended Sector)
Erase Suspend Program
(Non-Erase Suspended Sector)
Q7
Toggle
(Note2)
Toggle
Toggle
Toggle
0
0
1
(Note3)
1
N/A
N/A
Byte Program in Auto Program Algorithm
Program/Erase in Auto Erase Algorithm
Time Limits Erase Suspended Mode Erase Suspend Program
Q7
0
Q7
1
1
1
0
1
0
Exceeded
(Non-Erase Suspended Sector)
TABLE 4. WRITE OPERATION STATUS
Notes:
1. Performing successive read operations from the erase-suspended sector will cause Q2 to toggle.
2. Performing successive read operations from any address will cause Q6 to toggle.
3. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the
Q2 bit.
However, successive reads from the erase-suspended sector will cause Q2 to toggle.
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