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參數(shù)資料
| 型號： | 29C040 |
| 廠商： | Atmel Corp. |
| 英文描述： | 4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
| 中文描述： | 4兆位為512k × 8 5伏只有256字節(jié)的扇區(qū)的CMOS閃存 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 234K |
| 代理商： | 29C040 |
4-Megabit
(512K x 8)
5-volt Only
256-Byte Sector
CMOS Flash
Memory
AT29C040A
Features
Fast Read Access Time - 100 ns
5-Volt-Only Reprogramming
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
2048 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Two 16 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
40 mA Active Current
100
μ
A CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
Description
The AT29C040A is a 5-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 100 ns, and a low 220 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 100
μ
A. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
5-volt-only Flash family.
(continued)
AT29C040A
DIP Top View
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
TSOP Top View
Type 1
0333E–9/97
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