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參數(shù)資料
| 型號： | 2931-150 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, 55KS-1, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 2931-150 |
2931-150R3
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
2931-150
150 Watts, 38 Volts, 50s, 4%
Radar 2900-3100 MHz
Preliminary
GENERAL DESCRIPTION
The 2931-150 is an internally matched, COMMON BASE bipolar transistor
capable of providing 150 Watts of pulsed RF output power at 50s pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch
and test fixture has been optimized through the use of Pulsed Automated
Load Pull. This hermetic ceramic sealed transistor is specifically designed for
S-band radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°C1
500 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
65 V
Emitter to Base Voltage (BVebo)
3.0 V
Collector Current (Ic)
15.0 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Power Output
F=2900-3100 MHz
150
W
Pin
Power Input
Vcc = 38 Volts
21.7
W
Pg
Power Gain
Pulse Width = 50 s
8.3
8.7
dB
η
c
Collector Efficiency
Duty Factor = 4 %
45
50
%
Rl
Return Loss
7
dB
Pd
Pulse Droop
0.6
dB
tr
Rise Time
150
nS
VSWRl
Load Mismatch Tolerance
1
F = 3100 MHz, Po = 150W
2:1
FUNCTIONAL CHARACTERISTICS @ 25
°C
BVebo
Emitter to Base Breakdown
Ie = 30 mA
3.0
V
BVces
Collector to Emitter Breakdown
Ic = 120 mA
65
V
hFE
DC – Current Gain
Vce = 5V, Ic = 600 mA
18
60
θjc1
Thermal Resistance
0.35
°C/W
NOTE:
1. At rated output power and pulse conditions
Issue 2, April 2005
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