參數(shù)資料
型號(hào)： 28F160F3
廠商： Intel Corp.
英文描述： 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 16兆快速啟動(dòng)塊快閃記憶體（16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 31/47頁(yè)
文件大?。?/td> 277K
代理商： 28F160F3
E
8.4
FAST BOOT BLOCK DATASHEET
31
PRODUCT PREVIEW
DC Characteristics
—Extended Temperature
(Continued)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
V
IL
Input Low
Voltage
–0.4
0.4
–0.2
0.2
–0.2
0.2
V
V
IH
Input High
Voltage
V
CCQ
–
0.4V
V
CCQ
–
0.2V
-0.10
V
CCQ
–
0.2V
-0.10
V
V
OL
Output Low
Voltage
0.10
0.10
0.10
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High
Voltage
V
CCQ
–
0.1V
V
CCQ
–
0.1V
V
CCQ
–
0.1V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100
μ
A
V
PPLK
V
Lock-Out
Voltage
2
1.5
1.5
1.5
1.5
V
Complete Write
Protection
V
PP1
V
PP
during
2
2.7
3.6
V
V
PP2
Program and
2
2.7
2.85
V
V
PP3
Erase Operations
2
2.7
3.3
V
V
PP4
2,5
11.4
12.6
11.4
12.6
11.4
12.6
V
V
LKO
V
CC
Prog/Erase
Lock Voltage
1.5
1.5
1.5
V
V
LKO2
V
CCQ
Prog/Erase
Lock Voltage
1.2
1.2
1.2
V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at normal V
CC
, T = +25 °C.
2. I
CCES
is specified with device deselected. If device is read while in erase suspend, current draw is sum of I
CCES
and I
CCR
.
3. Erases and program operations are inhibited when V
PP
≤
V
PPLK
, and not guaranteed outside the valid V
PP
ranges of V
PPH1
and V
PPH2
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels, in static operation.
6. Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
PP
may be connected to 12 V for a total of 80 hours maximum.
7. The specification is the sum of V
CC
and V
CCQ
currents.
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