參數(shù)資料
型號： 28F016SC
英文描述： Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述： 28F016SC -字節(jié)寬SmartVoltage FlashFile Memory系列4。 8。及16兆比特
文件頁數(shù)： 22/59頁
文件大?。?/td> 384K
代理商： 28F016SC
3 VOLT ADVANCED+ BOOT BLOCK
E
22
PRODUCT PREVIEW
Any attempt to address Protection Program
commands outside the defined protection register
address space will result in a Status Register error
(Program Error bit SR.4 will be set to 1). Attempting
to program or to a previously locked protection
register segment will result in a status register error
(program error bit SR.4 and lock error bit SR.1 will
be set to 1).
3.4.3
LOCKING THE PROTECTION
REGISTER
The user-programmable segment of the protection
register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is
programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the
Protection Program command to program
“FFFD” to
the PR-LOCK location. After these bits have been
programmed, no further changes can be made to
the values stored in the protection register.
Protection Program commands to a locked section
will result in a status register error (Program Error
bit SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
4 Words
Factory Programmed
4 Words
User Programmed
1 Word Lock
88H
85H
84H
81H
80H
0645_05
Figure 5. Protection Register Memory Map
3.5
V
PP
Program and Erase
Voltages
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system writes plus a V
PP
pin for 12 V
production programming and
protection.
complete
write
3.5.1
EASY-12 V OPERATION FOR FAST
MANUFACTURING PROGRAMMING
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system programming and erase in the
2.7 V–3.6 V
range.
programming,
3 Volt
Advanced+
includes a low-cost, backward-compatible 12 V
programming feature.
For
fast
production
Boot
Block
When V
PP
is between 1.65 V and 3.6 V, all program
and erase current is drawn through the V
CC
pin.
Note that if V
PP
is driven by a logic signal,
V
IH =
1.65 V. That is, V
PP
must remain above 1.65 V
to perform in-system flash modifications. When V
PP
is connected to a 12 V power supply, the device
draws program and erase current directly from the
V
PP
pin. This eliminates the need for an external
switching transistor to control the voltage V
PP
.
Figure 6 shows examples of how the flash power
supplies can be configured for various usage
models.
The 12 V V
PP
mode enhances programming
performance during the short period of time typically
found in manufacturing processes; however, it is
not intended for extended use. 12 V may be applied
to V
PP
during program and erase operations for a
maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. V
PP
may be
connected to 12 V for a total of 80 hours maximum.
Stressing the device beyond these limits may cause
permanent damage.
3.5.2
V
≤
V
FOR COMPLETE
PROTECTION
In addition to the flexible block locking, the V
PP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash
device. When V
PP
is below V
PPLK
, any program or
erase operation will result in a error, prompting the
corresponding status register bit (SR.3) to be set.
3.5.3
V
PP
USAGE
The V
PP
pin is used for two functions: Absolute data
protection and fast production programming.
When V
PP
≤
V
PPLK
, then all program or erase
operations to the device are inhibited, providing
absolute data protection.
相關PDF資料
PDF描述
28F032C3 3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F160F3 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F800F3 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導塊閃速存儲器)
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導塊閃速存儲器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
相關代理商/技術參數(shù)
參數(shù)描述
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
28F020 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*