參數(shù)資料
型號(hào): 28F008S
廠商: Intel Corp.
英文描述: 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器)
中文描述: 8兆(1兆比特× 8)FLASHFILE內(nèi)存(8米位(1米位× 8)閃速存儲(chǔ)器)
文件頁(yè)數(shù): 19/28頁(yè)
文件大?。?/td> 347K
代理商: 28F008S
28F008SA-L
DC CHARACTERISTICS
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
I
CCR
V
CC
Read Current
1
5
12
mA V
e
V
CC
Max, CE
Y
e
GND
f
e
5 MHz, I
OUT
e
0 mA
CMOS Inputs
5
12
mA V
e
V
CC
Max, CE
Y
e
V
IL
f
e
5 MHz, I
OUT
e
0 mA
TTL Inputs
I
CCW
I
CCE
I
CCES
V
CC
Byte Write Current
V
CC
Block Erase Current
V
CC
Erase Suspend
Current
1
6
18
mA Byte Write In Progress
1
6
18
mA Block Erase In Progress
1, 2
3
6
mA Block Erase Suspended
CE
Y
e
V
IH
m
A V
PP
s
V
CC
m
A RP
Y
e
GND
g
0.2V
I
PPS
I
PPD
V
PP
Standby Current
V
PP
Deep PowerDown
Current
1
g
1
0.10
g
15
5.0
1
I
PPR
I
PPW
V
PP
Read Current
V
PP
Byte Write Current
200
m
A V
PP
l
V
CC
mA V
PP
e
V
PPH
Byte Write in Progress
1
10
30
I
PPE
V
PP
Block Erase Current
1
10
30
mA V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend
Current
1
90
200
m
A V
PP
e
V
PPH
Block Erase Suspended
V
IL
V
IH
V
OL
V
OH1
V
OH2
Input Low Voltage
b
0.5
0.6
V
Input High Voltage
2.0
V
CC
a
0.5
0.4
V
Output Low Voltage
3
V
V
CC
e
V
CC
Min, I
OL
e
2 mA
V
CC
e
V
CC
Min, I
OH
e b
2 mA
I
OH
e
2.5
m
A, V
CC
e
V
CC
Min
I
OH
e b
100
m
A, V
CC
e
V
CC
Min
Output High Voltage (TTL)
3
2.4
V
Output High Voltage
(CMOS)
0.85 V
CC
V
CC
b
0.4
0.0
V
V
PPL
V
PP
during Normal
Operations
4
6.5
V
V
PPH
V
PP
during Erase/Write
Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.0
V
CAPACITANCE
(5)
T
A
e
25
§
C, f
e
1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
C
IN
Input Capacitance
6
8
pF
V
IN
e
0V
V
OUT
e
0V
C
OUT
Output Capacitance
8
12
pF
19
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