參數(shù)資料
型號: 28C17AFT-20/TS
元件分類: PROM
英文描述: 2K X 8 EEPROM 5V, 200 ns, PDSO28
封裝: 8 X 20 MM, TSOP-28
文件頁數(shù): 4/8頁
文件大?。?/td> 100K
代理商: 28C17AFT-20/TS
28C17A
DS11127F-page 4
1994 Microchip Technology Inc.
TABLE 1-4:
BYTE WRITE AC CHARACTERISTICS
FIGURE 1-2:
PROGRAMMING WAVEFORMS
AC Testing Waveform:
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V
Output Load:
1 TTL Load + 100 pF
Input Rise/Fall Times:
20 ns
Ambient Temperature:
Commercial (C):
Tamb
=
0C to +70C
Industrial
(I):
Tamb
=
-40C to +85C
Parameter
Symbol
Min
Max
Units
Remarks
Address Set-Up Time
tAS
10
ns
Address Hold Time
tAH
50
ns
Data Set-Up Time
tDS
50
ns
Data Hold Time
tDH
10
ns
Write Pulse Width
tWPL
100
ns
Note 1
Write Pulse High Time
tWPH
50
ns
OE Hold Time
tOEH
10
ns
OE Set-Up Time
tOES
10
ns
Data Valid Time
tDV
1000
ns
Note 2
Time to Device Busy
tDB
250
ns
Write Cycle Time (28C17A)
tWC
1
ms
0.5 ms typical
Write Cycle Time (28C17AF)
tWC
200
s
100
s typical
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-
itive edge of CE or WE, whichever occurs rst
Note 2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH
after the positive edge of WE or CE, whichever occurs rst.
tAS
tAH
tWPL
tDS
tDH
tOES
tOEH
tWC
Address
CE, WE
Data In
OE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
Rdy/Busy
VOH
VOL
tDB
tDV
Busy
Ready
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參數(shù)描述
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