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參數(shù)資料
| 型號： | 28C011TRTFS-20 |
| 廠商： | Maxwell Technologies, Inc |
| 英文描述： | 1 Megabit (128K x 8-Bit) EEPROM |
| 中文描述： | 1兆位（128K的× 8位）的EEPROM |
| 文件頁數(shù)： | 1/19頁 |
| 文件大?。?/td> | 348K |
| 代理商： | 28C011TRTFS-20 |
1
M
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301 - wwwmaxwell.com
1 Megabit (128K x 8-Bit) EEPROM
28C011T
2003 Maxwell Technologies
All rights reserved.
11.10.03 REV 10
F
EATURES
:
128k x 8-bit EEPROM
R
AD
-P
AK
radiation-hardened against natural space radia-
tion
Total dose hardness:
- > 100 krad (Si), depending upon space mssion
Excellent Single Event Effects:
- No Latchup > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
Package:
- 32-pin R
AD
-P
AK
flat package
- 32-pin Rad-Tolerant flat package
- JEDEC-approved byte-wide pinout
High speed:
- 120, 150, and 200 ns maximumaccess times available
High endurance:
- 10,000 erase/write (in Page Mode),
- 10 year data retention
Page write mode:
- 1 to 128 bytes
Low power dissipation
- 20 mW/MHz active (typical)
- 110 μW standby (maximum
D
ESCRIPTION
:
Maxwell Technologies’ 28C011T high-density 1 Megabit (128K
x 8-Bit) EEPROMmcrocircuit features a greater than 100
krad (Si) total dose tolerance, depending upon space mssion.
The 28C011T is capable of in-systemelectrical byte and page
programmability. It has a 128-byte page programmng function
to make its erase and write operations faster. It also features
data polling and a Ready/Busy signal to indicate the comple-
tion of erase and programmng operations. In the 28C010T,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Software data protection is implemented
using the JEDEC optional standard algorithm
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the mcrocircuit pack-
age. It elimnates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mssion. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
28C011T
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| 28C011TRT1FB-12 | 1 Megabit (128K x 8-Bit) EEPROM |
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| 28C011TRT2FB-20 | 1 Megabit (128K x 8-Bit) EEPROM |
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參數(shù)描述 |
|---|---|
| 28C0236-0AW | 制造商:Laird Technologies Inc 功能描述:LEADED,6X10MM,8A,499 OHM,1 LINE,-55-+125,T/R - Bulk |
| 28C0236-0AW-10 | 制造商:Laird Technologies Inc 功能描述:LEADED,6X10MM,8A,499 OHM,1 LINE,-55-+125,T/R,HAZMAT - Bulk |
| 28C0236-0BS | 制造商:Laird Technologies Inc 功能描述:LEADED,6X10MM,8A,835 OHM,1 LINE,-55-+125,BULK - Bulk |
| 28C0236-0BS-10 | 功能描述:EMI/RFI 抑制器及鐵氧體 835ohms 100MHz 5A Thru-hole RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| 28C0236-0BW | 功能描述:BEAD MULTI-TURN AXIAL 835 OHMS RoHS:否 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A |
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