參數(shù)資料
型號(hào): 27C1100
廠商: Macronix International Co., Ltd.
英文描述: 1M-BIT [128K x 8/64K x 16] CMOS EPROM
中文描述: 100萬位[128K的x 8/64K × 16]的CMOS存儲(chǔ)器
文件頁數(shù): 11/19頁
文件大?。?/td> 795K
代理商: 27C1100
11
REV. 4.6, JAN. 14, 2003
P/N: PM0156
MX27C1100/27C1024
DC PROGRAMMING CHARACTERISTICS
TA = 25
o
C
±
5
o
C
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
CONDITIONS
VOH
Output High Voltage
2.4
V
IOH = -0.40mA
VOL
Output Low Voltage
0.4
V
IOL = 2.1mA
VIH
Input High Voltage
2.0
VCC + 0.5
V
VIL
Input Low Voltage
-0.3
0.8
V
ILI
Input Leakage Current
-10
10
uA
VIN = 0 to 5.5V
VH
A9 Auto Select Voltage
11.5
12.5
V
ICC3
VCC Supply Current (Program & Verify)
50
mA
IPP2
VPP Supply Current(Program)
30
mA
CE = VIL, OE = VIH
VCC1
Fast Programming Supply Voltage
6.00
6.50
V
VPP1
Fast Programming Voltage
12.5
13.0
V
AC PROGRAMMING CHARACTERISTICS
TA = 25
o
C
±
5
°
C
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
CONDITIONS
tAS
Address Setup Time
2.0
us
tOES
OE Setup Time
2.0
us
tDS
Data Setup Time
2.0
us
tAH
Address Hold Time
0
us
tDH
Data Hold Time
2.0
us
tDFP
Output Enable to Output Float Delay
0
130
ns
tVPS
VPP Setup Time
2.0
us
tPW
PGM Program Pulse Width
95
105
us
tVCS
VCC Setup Time
2.0
us
tCES
CE Setup Time
2.0
us
tOE
Data valid from OE
150
ns
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