參數(shù)資料
型號: 27C080
廠商: Atmel Corp.
英文描述: 8-Megabit 1M x 8 UV Erasable CMOS EPROM
中文描述: 8兆100萬× 8紫外線擦除的CMOS存儲器
文件頁數(shù): 4/10頁
文件大?。?/td> 167K
代理商: 27C080
AT27C080
4
DC and AC Operating Conditions for Read Operation
AT27C080
-90
-10
-12
-15
Operating Temperature (Case)
Com.
0°C - 70°C
0°C - 70°C
0°C - 70°C
0°C - 70°C
Ind.
-40
°
C - 85
°
C
-40
°
C - 85
°
C
-40
°
C - 85
°
C
-40
°
C - 85
°
C
V
CC
Power Supply
5V
±
10%
5V
±
10%
5V
±
10%
5V
±
10%
DC and Operating Characteristics for Read Operation
Note:
1. V
CC
must be applied simultaneously or before OE/ V
PP
, and removed simultaneously or after OE/V
PP
.
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
(Com., Ind.)
±
1.0
μ
A
I
LO
Output Leakage Current
V
OUT
= 0V to V
CC
(Com., Ind.)
I
SB1
(CMOS), CE = V
CC
±
0.3V
±
5.0
μ
A
I
SB
V
CC
(1)
Standby Current
100
μ
A
I
SB2
(TTL), CE = 2.0 to V
CC
+ 0.5V
1.0
mA
I
CC
V
CC
Active Current
f = 5 MHz, I
OUT
= 0 mA, CE = V
IL
40
mA
V
IL
Input Low Voltage
-0.6
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
I
OH
= -400
μ
A
0.4
V
V
OH
Output High Voltage
2.4
V
AC Characteristics for Read Operation
Note:
2, 3, 4, 5. See AC Waveforms for Read Operation.
Symbol Parameter
Condition
AT27C080
Units
-90
-10
-12
-15
Min
Max
Min
Max
Min
Max
Min
Max
t
ACC
(4)
Address to Output Delay
CE=OE/V
PP
= V
IL
90
100
120
150
ns
t
CE
(3)
CE to Output Delay
OE = V
IL
90
100
120
150
ns
t
OE
(3)(4)
OE to Output Delay
CE = V
IL
20
20
30
35
ns
t
DF
(2)(5)
OE or CE High toOutputFloat,
whichever occurred first
30
30
35
40
ns
t
OH
Output Hold fromAddress,CE or
OE/V
PP
,whichever occurred first
0
0
0
0
ns
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