參數(shù)資料
型號(hào)： 26N90
廠商： IXYS Corporation
英文描述： HiPerFET Power MOSFETs
中文描述： HiPerFET功率MOSFET
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 124K
代理商： 26N90
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
900
900
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
26N90
25N90
26N90
25N90
26N90
25N90
26
25
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
104
100
26
25
A
I
AR
T
C
= 25 C
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
64
3
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
560
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
900
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
3.0
5.0
200
100
V
nA
A
mA
T
J
= 25 C
T
J
= 125 C
26N90
25N90
2
R
DS(on)
0.3
0.33
Single MOSFET Die
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98553D (9/99)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
V
DSS
900 V 26 A 0.30
900 V 25 A 0.33
I
DSS
R
DS(on)
t
rr
250 ns
250 ns
IXFK/IXFX 26N90
IXFK/IXFX 25N90
Preliminary data sheet
S
IXYS reserves the right to change limits, test conditions, and dimensions.
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