參數(shù)資料
型號: 2623CS
英文描述: 10 Gbits/s Lithium Niobate Electro-Optic Modulator
中文描述: 10 Gb /秒鈮酸鋰電光調(diào)制器
文件頁數(shù): 2/8頁
文件大小: 103K
代理商: 2623CS
Data Sheet
May 2001
10 Gbits/s Lithium Niobate Electro-Optic Modulator
2
Agere Systems Inc.
Description
The 10 Gbits/s Electro-Optic Modulator is designed for
long-wavelength, single-mode external amplitude mod-
ulation applications. It uses an integrated Mach-
Zehnder configuration to convert single polarization
CW light from a semiconductor (DFB) laser into a time-
varying optical output signal. Agere Systems Inc. also
offers a 10 mW CW laser with polarization-maintaining
fiber (D2525P) to use as a source for the modulator.
The Ti-diffusion process is a standard feature on all
modulator devices. The 2623N, 2623Y, and 2623CS
are single-drive, 10 Gbits/s modulators; the 2623CSA
is a single-drive, 10 Gbits/s modulator with an attenuat-
ing section. Variable attenuation to >19 dB is achieved
through a dc bias voltage.
The package is hermetic to protect the LiNbO
3
die from
the environment. Novel processing techniques now
make it possible to achieve 20-year operation with little
drift in the dc bias point. The modulator is tested to, and
meets the intent of TR-NWT-00468.
Other standard features include PANDA-type polariza-
tion-maintaining fiber (PMF) for the optical input (all
codes) and output (2623N, 2623Y, and 2623C) fiber
with FC-type connectors that are keyed to the axis of
polarization. Custom designs are available.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Parameter
Symbol
Min
Max
Unit
Storage Temperature
Optical Input Power @ 1.5
μ
m
RF Voltage (peak to peak)
dc Voltage (RF input)
dc Voltage (Attenuator input)
Operating Temperature
T
stg
P
IN
–40
85
30
°C
mW
V
RF
V
dcRF
V
dcATT
T
OP
10
20
25
70
V
V
V
°C
–20
–25
0
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