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參數(shù)資料
| 型號(hào)： | 25GD120DN2E |
| 英文描述： | Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems |
| 中文描述： | IGBT模塊 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 250K |
| 代理商： | 25GD120DN2E |
7
Oct-20-1997
BSM 25 GD 120 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 47
0
10
20
30
40
A
60
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
I
C
= 25 A
0
20
40
60
80
100
120
140
R
G
180
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load ,
T
j
= 125°C
par.:
V
CE
= 600 V,
V
GE
= ± 15 V,
R
G
= 47
0
10
20
30
40
A
60
I
C
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
T
j
= 125°C
par.:
V
CE
= 600V,
V
GE
= ± 15 V,
I
C
= 25 A
0
20
40
60
80
100
120
140
R
G
180
0
1
2
3
4
5
6
7
8
mWs
10
E
Eon
Eoff
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