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參數(shù)資料
| 型號(hào)： | 25GB120DN2 |
| 英文描述： | Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 234K |
| 代理商： | 25GB120DN2 |
2
Oct-20-1997
BSM 25 GB 120 DN2
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 1 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 25 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 25 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
V
GE(th)
4.5
5.5
6.5
V
V
CE(sat)
-
-
3.1
2.5
3.7
3
I
CES
-
-
2
0.5
-
0.8
mA
I
GES
-
-
180
nA
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 25 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
g
fs
10
-
-
S
C
iss
-
1.65
-
nF
C
oss
-
0.25
-
C
rss
-
0.11
-
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PDF描述 |
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| 25GD120DN2 | Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems |
| 25GD120DN2E | Complete, 100ksps, 8-Channel, 12-Bit Data Acquisition Systems |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 25GD120DN2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
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