參數(shù)資料
型號(hào): 25C080
廠商: Microchip Technology Inc.
英文描述: 8K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,3MHz,8K位,10M次可自定時(shí)擦寫周期,EEPROM)
中文描述: 8K的5.0V SPI總線串行EEPROM(4.5?5.5V之間,3MHz的,8K的位,1000萬(wàn)次可自定時(shí)擦寫周期和EEPROM)
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 85K
代理商: 25C080
25C080/160
DS21147F-page 4
Preliminary
1996 Microchip Technology Inc.
TABLE 1-3:
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted.
V
CC
= 4.5V to 5.5V
Commercial (C): Tamb = 0
°
to +70
°
C
Industrial (I):
Tamb = -40
°
to +85
°
C
Automotive (E): Tamb = -40C to +125C
Symbol
Parameter
f
SCK
Clock Frequency
t
CSS
CS Setup Time
t
CSH
CS Hold Time
t
CSD
CS Disable Time
t
SU
Data Setup Time
t
HD
Data Hold Time
t
R
CLK Rise Time
t
F
CLK Fall Time
t
HI
Clock High Time
t
LO
Clock Low Time
t
CLD
Clock Delay Time
t
V
Output Valid from
Clock Low
t
HO
Output Hold Time
t
DIS
Output Disable Time
t
HS
HOLD Setup Time
t
HH
HOLD Hold Time
t
HZ
HOLD Low to Output High-Z
t
HV
HOLD High to Output Valid
t
WC
Internal Write Cycle Time
Endurance
Min
100
100
250
30
50
150
150
50
Max
3
2
2
150
Units
MHz
ns
ns
ns
ns
ns
μ
s
μ
s
ns
ns
ns
ns
Test Conditions
(Note 1)
(Note 1)
0
100
100
100
100
10M
200
5
ns
ns
ns
ns
ns
ns
ms
(Note 1)
(Note 1)
(Note 1)
(Note 2)
E/W Cycles 25
°
C, Vcc = 5.0V, Block Mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: t
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal self-timed write
cycle is complete.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
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