參數(shù)資料
型號(hào)： 25AA080BP
廠(chǎng)商： Microchip Technology Inc.
英文描述： PHOTOTRANSISTOR 3MM 935NM NPN
中文描述： 8K的SPI總線(xiàn)串行EEPROM
文件頁(yè)數(shù)： 2/24頁(yè)
文件大?。?/td> 523K
代理商： 25AA080BP
25XX080A/B
DS21808B-page 2
2003 Microchip Technology Inc.
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
()
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-65°C to 125°C
ESD protection on all pins..........................................................................................................................................4 kV
TABLE 1-1:
DC CHARACTERISTICS
NOTICE
:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I):
T
AMB
= -40°C to +85°C
V
CC
= 1.8V to 5.5V
Automotive (E):
T
AMB
= -40°C to +125°C
V
CC
= 2.5V to 5.5V
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Test Conditions
D001
V
IH
1
High-level input
voltage
2.0
V
CC
+1
V
V
CC
≥
2.7V
(Note)
D002
V
IH
2
0.7 V
CC
V
CC
+1
V
V
CC
< 2.7V
(Note)
D003
V
IL
1
Low-level input
voltage
-0.3
0.8
V
V
CC
≥
2.7V
(Note)
D004
V
IL
2
-0.3
0.2 V
CC
V
V
CC
< 2.7V
(Note)
D005
V
OL
Low-level output
voltage
—
0.4
V
I
OL
= 2.1 mA
D006
V
OL
—
0.2
V
I
OL
= 1.0 mA, V
CC
< 2.5V
D007
V
OH
High-level output
voltage
V
CC
-0.5
—
V
I
OH
= -400
μ
A
D008
I
LI
Input leakage current
±1
μ
A
CS = V
CC
, V
IN
= V
SS
TO
V
CC
D009
I
LO
Output leakage
current
±1
μ
A
CS = V
CC
, V
OUT
= V
SS
TO
V
CC
D010
C
INT
Internal Capacitance
(all inputs and
outputs)
—
7
pF
T
AMB
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
D011
I
CC
Read
Operating Current
—
—
6
2.5
mA
mA
V
CC
= 5.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 5.0 MHz;
SO = Open
D012
I
CC
Write
—
—
3
mA
V
CC
= 5.5V
D013
Iccs
Standby Current
—
—
5
1
μ
A
μ
A
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, T
AMB
= -40°C
TO
+125°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, T
AMB
= -40°C
TO
+85°C
Note:
This parameter is periodically sampled and not 100% tested.
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