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參數(shù)資料
| 型號(hào)： | 24N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 230K |
| 代理商： | 24N60C3 |
SPW24N60C3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2800
-
pF
Output capacitance
C
oss
-
930
-
Reverse transfer capacitance
C
rss
-
66
-
Effective output capacitance, energy
related
3)
C
o(er)
-
114
-
Effective output capacitance, time
related
4)
C
o(tr)
-
204
-
Turn-on delay time
t
d(on)
-
13
-
ns
Rise time
t
r
-
21
-
Turn-off delay time
t
d(off)
-
73
-
Fall time
t
f
-
6
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
15
-
nC
Gate to drain charge
Q
gd
-
49
-
Gate charge total
Q
g
-
105
137
Gate plateau voltage
V
plateau
-
5.4
-
V
4)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=480 V,
V
GS
=10 V,
I
D
=24.3 A,
R
G
=3.3
V
DD
=480 V,
I
D
=24.3 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
1)
Pulse width limited by maximum temperature
T
j,max
only
2)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
3)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 1.0
page 3
2004-04-27
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