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參數(shù)資料
| 型號： | 24AA128 |
| 廠商： | Microchip Technology Inc. |
| 元件分類： | EEPROM |
| 英文描述： | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 中文描述： | 該CAT24FC02是一個(gè)2 KB的EEPROM的國內(nèi)256個(gè)8位每字舉辦的串行CMOS |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 185K |
| 代理商： | 24AA128 |
1998 Microchip Technology Inc.
DS21191B-page 7
24AA128/24LC128
6.0
WRITE OPERATIONS
6.1
Byte Write
Following the start condition from the master, the
control code (four bits), the chip select (three bits), and
the R/W bit (which is a logic low) are clocked onto the
bus by the master transmitter. This indicates to the
addressed slave receiver that the address high byte will
follow after it has generated an acknowledge bit during
the ninth clock cycle. Therefore, the next byte
transmitted by the master is the high-order byte of the
word address and will be written into the address
pointer of the 24xx128. The next byte is the least signif-
icant address byte. After receiving another acknowl-
edge signal from the 24xx128, the master device will
transmit the data word to be written into the addressed
memory location. The 24xx128 acknowledges again
and the master generates a stop condition. This ini-
tiates the internal write cycle, and, during this time, the
24xx128 will not generate acknowledge signals
(Figure 6-1). If an attempt is made to write to the array
with the WP pin held high, the device will acknowledge
the command but no write cycle will occur, no data will
be written, and the device will immediately accept a
new command. After a byte write command, the inter-
nal address counter will point to the address location
following the one that was just written.
6.2
Page Write
The write control byte, word address, and the first data
byte are transmitted to the 24xx128 in the same way as
in a byte write. But instead of generating a stop condi-
tion, the master transmits up to 63 additional bytes,
which are temporarily stored in the on-chip page buffer
and will be written into memory after the master has
transmitted a stop condition. After receipt of each word,
the six lower address pointer bits are internally
incremented by one. If the master should transmit more
than 64 bytes prior to generating the stop condition, the
address counter will roll over and the previously
received data will be overwritten. As with the byte write
operation, once the stop condition is received, an inter-
nal write cycle will begin (Figure 6-2). If an attempt is
made to write to the array with the WP pin held high, the
device will acknowledge the command but no write
cycle will occur, no data will be written, and the device
will immediately accept a new command.
6.3
Write Protection
The WP pin allows the user to write-protect the entire
array (0000-3FFF) when the pin is tied to V
CC
. If tied to
V
SS
or left floating, the write protection is disabled. The
WP pin is sampled at the STOP bit for every write
command (Figure 1-1) Toggling the WP pin after the
STOP bit will have no effect on the execution of the
write cycle.
FIGURE 6-1:
BYTE WRITE
FIGURE 6-2:
PAGE WRITE
X X
BUS ACTIVITY
MASTER
SDA LINE
BUS ACTIVITY
S
T
A
R
T
CONTROL
BYTE
ADDRESS
HIGH BYTE
ADDRESS
LOW BYTE
DATA
S
T
O
P
A
C
K
A
C
K
A
C
K
A
C
K
X = don’t care bit
S 1 0 1 0
0
A
2
A
1
A
0
P
X X
BUS ACTIVITY
MASTER
SDA LINE
BUS ACTIVITY
S
T
A
R
T
CONTROL
BYTE
ADDRESS
HIGH BYTE
ADDRESS
LOW BYTE
DATA BYTE 0
S
T
O
P
A
C
K
A
C
K
A
C
K
A
C
K
DATA BYTE 63
A
C
K
X = don’t care bit
S 1 0 1 0
0
A
2
A
1
A
0
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 24AA128EP | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 24AA128ESM | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 24AA128ESN | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 24AA128EST | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| 24AA128IP | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 24AA128/P | 功能描述:電可擦除可編程只讀存儲器 16kx8 - 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA128/S15K | 制造商:Microchip Technology Inc 功能描述:128K, 16K X 8, 1.8V SER EE, DI - Gel-pak, waffle pack, wafer, diced wafer on film |
| 24AA128/SM | 功能描述:電可擦除可編程只讀存儲器 16kx8 - 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA128/SN | 功能描述:電可擦除可編程只讀存儲器 16kx8 - 1.8V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 24AA128/W15K | 功能描述:電可擦除可編程只讀存儲器 128K, 16K X 8, 1.8V SER EE, WAFER RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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