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參數(shù)資料
| 型號(hào)： | 23C256 |
| 廠商： | NEC Corp. |
| 英文描述： | NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM |
| 中文描述： | NAND接口256M位掩碼，可編程ROM |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 242K |
| 代理商： | 23C256 |
HT23C256
CMOS 32K
×8-Bit Mask ROM
Block Diagram
Features
Operating voltage 2.7V~5.5V
Low power consumption
–
Operation: 25mA max. (VCC=5V)
10mA max. (VCC=3V)
–
Standby: 30
A max. (VCC=5V)
10
A max. (VCC=3V)
Access time:150ns max. (VCC=5V)
250ns max. (VCC=3V)
32768
×8 bits of mask ROM
Mask options: chip enable CE/CE/OE1/OE1 and
output enable OE/OE/NC
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 28-pin DIP/SOP
General Description
The HT23C256 is a read-only memory with
high performance CMOS storage device whose
256K of memory is arranged into 32768 words
by 8 bits.
For application flexibility, the chip enable and
output enable control pins can be selected as
active high or active low. This flexibility not
only allows easy interface with most microproc-
essors, but also eliminates bus contention in
multiple bus microprocessor systems. An addi-
tional feature of the HT23C256 is its ability to
enter the standby mode whenever the chip en-
able (CE/CE) is inactive, thus reducing current
consumption to below 30
A. The combination of
these functions makes the chip suitable for high
density low power memory applications.
1
24th Aug ’98
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