參數(shù)資料
型號(hào): 239S8E
廠商: 美國訊泰微波有限公司上海代表處
英文描述: GaAs MMIC SPDT SWITCH DC - 2.5 GHz
中文描述: 砷化鎵微波單片集成電路單刀雙擲開關(guān)直流- 2.5吉赫
文件頁數(shù): 1/6頁
文件大?。?/td> 232K
代理商: 239S8E
S
8
8 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC239S8
/
239S8E
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
v02.0805
General Description
Features
Functional Diagram
Low Insertion Loss: 0.4 dB
High Isolation: 35 dB
Fast Switching Speed: 2ns
High Input IP3: +50 dBm
Electrical Specifications,
T
A
= +25° C, Vctl = 0/-5V, 50 Ohm System
Typical Applications
The HMC239S8 / HMC239S8E is ideal for:
MMDS & WirelessLAN
Basestation Infrastructure
Portable Wireless
The HMC239S8 & HMC239S8E are low-cost GaAs
MMIC SPDT switches in 8-lead SOIC packages. The
switch can control signals from DC to 2.5 GHz. It is
especially suited for low or medium power applica-
tions which require extremely fast switching with
minimal insertion loss. The two control voltages
require a minimal amount of DC current which is opti-
mal for battery powered radio systems. RF1 and RF2
are reflective shorts when “Off”.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 0.1 GHz
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
0.4
0.4
0.5
0.6
0.7
0.6
0.6
0.7
0.8
1.0
dB
dB
dB
dB
dB
Isolation
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
33
26
18
14
36
29
21
17
dB
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
18
17
15
21
21
20
dB
dB
dB
Input Power for 1dB Compression
0/-5V Control
0.5 - 1.0 GHz
0.5 - 2.5 GHz
25
23
29
27
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
0/-5V Control
0.5 - 1.0 GHz
0.5 - 2.5 GHz
45
44
50
49
dBm
dBm
Switching Characteristics
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
2
10
ns
ns
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