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| 型號： | 23976 |
| 英文描述： | Utilizing the Page Mode Am29PDS32x for Maximum Performance |
| 中文描述： | 利用以獲得最大性能的頁面模式Am29PDS32x |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 23976 |
Publication#
23976
Issue Date:
June 5, 2000
Rev:
A
Amendment/
0
Utilizing the Page Mode Am29PDS32x for
Maximum Performance
Application Note
Note:
This application note assumes that you have either
read AMD’s “Understanding Page Mode Flash Memory De-
vices” application note, or have a solid knowledge base of
Page Mode devices.
Advanced Micro Devices currently has a wide variety of
flash memory devices to support several different mar-
ket segments. Many new applications need high-speed
access, high density, and are migrating to lower volt-
ages to save power. But, higher density and lower volt-
age tend to reduce performance in a standard random
access memory architecture. Therefore, AMD is using
different architectural approaches to increasing perfor-
mance in several new Flash memories. The
Am29PDS32x Page Mode flash device provides the
total solution for a low power, low voltage, high perfor-
mance system.
FEATURES OF THE Am29PDS32x DEVICE
The Am29PDS32x is a 16-bit wide device that provides
fast access times and software flexibility, while at the
same time consuming less power than other flash de-
vices. Here is a list of some of the device’s features:
I
Page Mode Operation
— Same page access times as fast as 45 ns
— Typical random access times for this device are
115 ns
— Page sizes of 4 words
I
Dual bank architecture
— One 4 Mbit bank, and one 28 Mbit bank (this
bank split is for the Am29PDS322)
— Able to program/erase from one bank while
reading from another bank with zero latency
I
Ultra low power consumption(typical values)
— 2 mA active read current at 1 MHz
— 16 mA active read current at 10 MHz
— 2.5 mA active intra-Page read at 20 MHz
— 200 nA in standby or automatic sleep mode
PAGE SIZES
The Am29PDS32x has page sizes of 4 words. The de-
vice has a 16-bit wide data bus, and address lines
ranging from A20:A0. Address lines A20:A2 define the
different pages within the device, while A1:A0 define
one of the four words within the page. Table 1 shows
how each word is defined.
Table 1.
Word Mode
IMPROVED OVERALL ACCESS TIMES
The Am29PDS32x device family can perform both
standard, as well as Page Mode read operations. The
first random access read from the page has a t
ACC
of
115 ns, while all subsequent Page Mode read opera-
tions have an access time of 45 ns. Obviously, the more
the system reads from the same page, the faster the
average access time. The less the system reads from
the same page, the slower the average access time. In
order to obtain optimum performance from this device,
the system’s program should be structured such that as
many consecutive reads as possible are from within the
same page. This could involve aligning frequently ac-
cessed data structures or loop and jump labels to start
on page boundaries.
By looking at an example comparing the Am29PDS322
and a standard flash device, the speed improvement
can clearly be seen. Table 2 compares the Am29SL160
device with a random access time of 100 ns, and the
Am29PDS322 with a random access time of 115 ns,
and a page access time of 45 ns. This example shows
the total time for each device to read four consecutive
words.
Word
A1
A0
Word 0
0
0
Word 1
0
1
Word 2
1
0
Word 3
1
1
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